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Production

Currently, OOO "EPICOM" develops and manufactures high-resistance GaAs-AlGaAs epitaxial p-i-n structures for power diodes with nominal values of 400, 600, 900, 1200 V, as well as GaAs-AlGaAs heterostructures for varicaps.

GaAs-AlGaAs epitaxial p-i-n structures for power electronics devices
GaAs-AlGaAs epitaxial p-i-n structures for power electronics devices
GaAs-AlGaAs heterostructures for varicaps
GaAs-AlGaAs heterostructures for varicaps