Currently, OOO "EPICOM" develops and manufactures high-resistance GaAs-AlGaAs epitaxial p-i-n structures for power diodes with nominal values of 400, 600, 900, 1200 V, as well as GaAs-AlGaAs heterostructures for varicaps.
- high speed of operation - reverse recovery time is up to 15 ns
- wide range of operating temperatures - up to 250° C
- independence of the parameters of the reverse recovery process from temperature
- minimum leakage currents, including at a limiting temperature of 250° C
- soft characteristic of the reverse recovery process
- high avalanche resistance (reliability)
- wide range of operating currents - 1-100 A