Patents and publications
"EPICOM" has a number of publications on topics related to developments in the field of semiconductor materials based on gallium arsenide.
In 2018, as a result of research work within the framework of cooperation with the Fund for the Promotion of Innovations within the framework of the "Start-1" program, a patent for invention No. 2647209 "A method for obtaining a multilayer heteroepitaxial p-i-n structure in the AlGaAs system by the method of liquid-phase epitaxy" was obtained. In 2020, another patent application was filed.
M.N. Drozdov, Yu.N. Drozdov, P.A. Yunin, P.I. Folomin, A.B. Gritsenko, V.L. Kryukov, E.V. Kryukov. Extremely deep layer-by-layer analysis of the atomic composition of thick (> 100 mm) GaAs layers in high-power PIN diodes by the method of secondary ion mas
N.V. Vostokov, V.M. Daniltsev, S.A. Krayev, V.L. Kryukov, E.V. Skorokhodov, S.S. Strelchenko, V.I. Shashkin. Vertical field-effect transistor with control p-n junction on the base of GaAs. SEMICONDUCTORS, vol. 53, no. 10, pp. 1311-1314 (2019)